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Monitoring and controlling the neutral and charged excitons (trions) in two-dimensional (2D) materials are essential for the development of high-performance devices. However, nanoscale control is challenging because of diffraction-limited spatial resolution of conventional far-field techniques. Here, we extend the classical tip-enhanced photoluminescence based on tip-substrate nanocavity to quantum regime and demonstrate controlled nano-optical imaging, namely, tip-enhanced quantum plasmonics. In addition to improving the spatial resolution, we use the scanning probe to control the optoelectronic response of monolayer WS 2 by varying the neutral/charged exciton ratio via charge tunneling in Au-Ag picocavity. We observe trion “hot spots” generated by varying the picometer-scale probe-sample distance and show the effects of weak and strong coupling, which depend on the spatial location. Our experimental results are in agreement with simulations and open an unprecedented view of a new range of quantum plasmonic phenomena with 2D materials that will help to design new quantum optoelectronic devices. 

Memristive systems offer biomimetic functions that are being actively explored for energy‐efficient neuromorphic circuits. In addition to providing ultimate geometric scaling limits, 2D semiconductors enable unique gate‐tunable responses including the recent realization of hybrid memristor and transistor devices known as memtransistors. In particular, monolayer MoS₂memtransistors exhibit nonvolatile memristive switching where the resistance of each state is modulated by a gate terminal. Here, further control over the memtransistor neuromorphic response through the introduction of a second gate terminal is gained. The resulting dual‐gated memtransistors allow tunability over the learning rate for non‐Hebbian training where the long‐term potentiation and depression synaptic behavior is dictated by gate biases during the reading and writing processes. Furthermore, the electrostatic control provided by dual gates provides a compact solution to the sneak current problem in traditional memristor crossbar arrays. In this manner, dual gating facilitates the full utilization and integration of memtransistor functionality in highly scaled crossbar circuits. Furthermore, the tunability of long‐term potentiation yields improved linearity and symmetry of weight update rules that are utilized in simulated artificial neural networks to achieve a 94% recognition rate of hand‐written digits.

 

2D transition metal dichalcogenides (TMDs) have exhibited strong application potentials in new emerging electronics because of their atomic thin structure and excellent flexibility, which is out of field of tradition silicon technology. Similar to 3D p–n junctions, 2D p–n heterojunctions by laterally connecting TMDs with different majority charge carriers (electrons and holes), provide ideal platform for current rectifiers, light‐emitting diodes, diode lasers and photovoltaic devices. Here, growth and electrical studies of atomic thin high‐quality p–n heterojunctions between molybdenum diselenide (MoSe₂) and tungsten diselenide (WSe₂) by one‐step chemical vapor deposition method are reported. These p–n heterojunctions exhibit high built‐in potential (≈0.7 eV), resulting in large current rectification ratio without any gate control for diodes, and fast response time (≈6 ms) for self‐powered photodetectors. The simple one‐step growth and electrical studies of monolayer lateral heterojunctions open up the possibility to use TMD heterojunctions for functional devices.